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| May 1997 NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 75 A, 50 V. RDS(ON) = 0.010 @ VGS= 5 V RDS(ON) = 0.0075 @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP7052L 50 50 16 25 75 225 150 1 -65 to 175 NDB7052L Units V V V Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed A PD Maximum Power Dissipation @ TC = 25C Derate above 25C W W/C C TJ,TSTG RJC RJA Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 62.5 C/W C/W (c) 1997 Fairchild Semiconductor Corporation NDP7052L Rev.B1 Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 75 A 550 75 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 48 V, VGS = 0 V TJ = 125C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note) o 50 0.075 250 1 100 -100 V V/oC A mA nA nA V/oC 2 1.6 0.01 0.018 0.0075 A 69 S V BVDSS/TJ IDSS VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V ID = 250 A, Referenced to 25 o C VDS = VGS, ID = 250 A TJ = 125C VGS = 5 V, ID = 37.5 A TJ = 150C VGS = 10 V, ID = 37.5 A 1 0.8 -0.005 1.3 0.85 0.0085 0.014 0.0065 60 ON CHARACTERISTICS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold VoltageTemp.Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VGS = 5 V, VDS = 10 V VDS = 5 V, ID = 37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD trr Irr Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note) 4030 1260 450 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 25 V, ID = 37.5 A, VGS = 5 V, RGEN = 10 RGS = 10 25 215 110 170 50 400 200 300 130 nS nS nS nS nC nC nC VDS= 24 V ID = 75 A , VGS = 5 V 92 15 45 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 37.5 A VGS = 0 V, IF = 37.5 A dIF/dt = 100 A/s (Note) 75 180 0.9 40 2 1.3 150 10 A A V ns A Note: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP7052L Rev.B1 Typical Electrical Characteristics 100 1.8 VGS = 10V 6.0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 5.0 80 1.6 3.5 R DS(on) , NORMALIZED V GS = 3.0V 1.4 60 3.0 3.5 1.2 4.0 4.5 5.0 6.0 40 1 2.5 20 0.8 10 0 0 0.5 1 1.5 2 VDS , DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.6 0 20 40 60 I D , DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.08 DRAIN-SOURCE ON-RESISTANCE I D = 37.5A 1.75 25C R DS(on) , ON-RESISTANCE (OHM) 0.06 V GS = 5V ID=37.5A 125C R DS(ON), NORMALIZED 1.5 1.25 0.04 1 0.02 0.75 0.5 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 0 2 2.5 3 3.5 4 V GS , GATE TO SOURCE VOLTAGE (V) 4.5 5 Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 60 60 50 25C 125C I S, REVERSE DRAIN CURRENT (A) VDS = 5V , DRAIN CURRENT (A) T = -55C J 20 V GS = 0V TJ = 125C 40 1 25C 0.1 30 -55C 20 0.01 I D 10 0.001 0 0.0001 1 1.5 2 2.5 V GS , GATE TO SOURCE VOLTAGE (V) 3 3.5 0 0.2 0.4 0.6 0.8 V SD , BODY DIODE FORWARD VOLTAGE (V) 1 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP7052L Rev.B1 Typical Electrical Characteristics (continued) 10 8000 I D = 75A VGS , GATE-SOURCE VOLTAGE (V) V DS = 12V 8 CAPACITANCE (pF) 24V 48V 4000 Ciss 6 2000 1500 1000 Coss 4 2 500 f = 1 MHz V GS = 0V 1 2 Crss 300 0 0 20 40 60 80 100 120 140 160 3 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 30 50 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8.Capacitance Characteristics. 400 200 100 ) (ON DS 2000 Lim it 100 1m 10 ms s 1500 R s POWER (W) I D , DRAIN CURRENT (A) 50 20 10 SINGLE PULSE RJC =1 C/W TC = 25C 10 0m s 1000 VGS = 10V 5 2 1 0.5 0.5 DC SINGLE PULSE o R JC = 1 C/W 500 TC = 25 C 0 0.1 1 3 5 10 20 V DS , DRAIN-SOURCE VOLTAGE (V)) 30 80 0.3 1 3 10 30 100 300 1,000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 TRANSIENT THERMAL RESISTANCE 0.5 0.3 r(t), NORMALIZED EFFECTIVE 0.2 0.2 0.1 R JC (t) = r(t) * R JC R = 1.0 C/W JC 0.1 0.05 P(pk) 0.05 0.03 0.02 0.02 0.01 Single Pulse t1 T -T J t2 =P *R (t) C JC Duty Cycle, D = t 1/t 2 100 500 1000 0.01 0.01 0.05 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 Figure 11. Transient Thermal Response Curve. NDP7052L Rev.B1 |
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